CM75TX-24S Datasheet, PDF (5/10 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

< IGBT MODULES >
CM75TX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
TEST CIRCUIT
P1
VGE=15 V
G UP
EsUP
V
Short-
ci rcuited
G UN
EsUN
N1
P
P1
VGE=15 V
IC
G VP
EsVP
U
V
Short-
ci rcuited
G VN
EsVN
N
N1
P
P1
P
VGE=15 V
IC
GWP
IC
EsWP
V
V
W
Short-
ci rcuited
GWN
EsW
N
NN1
N
28~30
Short-
circuited 1
54~56
2
48~50
V
VGE=15 V 5
I_C
6
23~25
59~61
Gate-emitter GVP-EsVP, GVN-EsVP,
short-circuited GWP-EsWN, GWN-EsWN
UP / UN IGBT
28~30
Short-
circuited 9
54~56
10
42~44
V
28~30
Short-
circuited 17
54~56
18
36~38
V
VGE=15 V 13
VGE=15 V 21
I_C
I_C
14
22
23~25
59~61
23~25
59~61
Gate-emitter GUP-EsUP, GUN-EsUN,
short-circuited GWP-EsWP, GWN-EsWN
VP / VN IGBT
Gate-emitter GUP-EsUP, GUN-EsUN,
short-circuited GVP-EsVP, GVN-EsVN
WP / WN IGBT
V_CEsat test circuit
28~30
54~56
28~30
54~56
28~30
54~56
Short-
ci rcuited 1
Short-
IE
ci rcuited 9
Short-
IE
ci rcuited 17
IE
2
V
Short-
ci rcuited 5
48~50
10
V
Short-
ci rcuited 13
42~44
18
V
Short-
ci rcuited 21
36~38
6
23~25
59~61
14
23~25
59~61
22
23~25
59~61
P1
Short-
circuited
G UP
EsUP
Short-
circuited
G UN
EsUN
N1
P
U
V
I_E
N
Gate-emitter GVP-EsVP, GVN-EsVP,
short-circuited GWP-EsWN, GWN-EsWN
UP / UN FWDi
P1
Short-
circuited
G VP
EsVP
Short-
circuited
G VN
EsVN
N1
P
V
V
P1
Short-
circuited
GWP
EsWP
Short-
I_E
circuited
GWN
EsWN
N
N1
P
W
V
I_E
N
Gate-emitter GUP-EsUP, GUN-EsUN,
short-circuited GWP-EsWP, GWN-EsWN
VP / VN FWDi
Gate-emitter GUP-EsUP, GUN-EsUN,
short-circuited GVP-EsVP, GVN-EsVN
WP / WN FWDi
VEC test circuit
Publication Date : September 2012
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