CM75TX-24S Datasheet, PDF (2/10 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM75TX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (T_j=25 °C, unless otherwise specified)
INVERTER PART IGBT/FWDi
Symbol
Item
Conditions
V_CES
Collector-emitter voltage
G-E short-circuited
V_GES
I_C
I_CRM
P_tot
I_E
I_ERM
(Note1)
(Note1)
Gate-emitter voltage
Collector current
Total power dissipation
Emitter current
C-E short-circuited
DC, T_C=122 °C ^{(Note2, 4)}
Pulse, Repetitive ^(Note3)
T_C=25 °C ^{(Note2, 4)}
(Note2)
Pulse, Repetitive ^(Note3)
MODULE
Symbol
Item
Conditions
V_isol
Isolation voltage
Terminals to base plate, RMS, f=60 Hz, AC 1 min
T_jmax
T_Cmax
T_jop
T_stg
Maximum junction temperature
Maximum case temperature
Operating junction temperature
Storage temperature
Instantaneous event (overload)
(Note4)
Continuous operation (under switching)
-
Rating
Unit
1200
V
± 20
V
75
A
150
600
W
75
A
150
Rating
Unit
2500
V
175
°C
125
°C
-40 ~ +150
°C
-40 ~ +125
ELECTRICAL CHARACTERISTICS (T _j =25 °C, unless otherwise specified)
INVERTER PART IGBT/FWDi
Symbol
Item
Conditions
Limits
Unit
Min.
Typ.
Max.
I_CES
I_GES
V_GE(th)
Collector-emitter cut-off current
Gate-emitter leakage current
Gate-emitter threshold voltage
V_CEsat
Collector-emitter saturation voltage
C_ies
C_oes
C_res
Q_G
t_d(on)
t_r
t_d(off)
t_f
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V (Note1)
EC
Emitter-collector voltage
t (Note1)
rr
Q (Note1)
rr
E_on
E_off
E ^(Note1)
rr
R_CC'+EE'
r_g
Reverse recovery time
Reverse recovery charge
Turn-on switching energy per pulse
Turn-off switching energy per pulse
Reverse recovery energy per pulse
Internal lead resistance
Internal gate resistance
V_CE=V_CES, G-E short-circuited
-
V_GE=V_GES, C-E short-circuited
-
I_C=7.5 mA, V_CE=10 V
5.4
I_C=75 A ^(Note5) ,
T _j =25 °C
-
V_GE=15 V,
T _j =125 °C
-
( Terminal)
T _j =150 °C
-
I_C=75 A ^(Note5) ,
T _j =25 °C
-
V_GE=15 V,
T _j =125 °C
-
(Chip)
T _j =150 °C
-
-
V_CE=10 V, G-E short-circuited
-
-
V_CC=600 V, I_C=75 A, V_GE=15 V
-
V_CC=600 V, I_C=75 A, V_GE=±15 V,
-
-
R_G=8.2 Ω, Inductive load
-
-
I_E=75 A ^(Note5) ,
G-E short-circuited,
(Terminal)
I_E=75 A ^(Note5) ,
G-E short-circuited,
T _j =25 °C
-
T _j =125 °C
-
T _j =150 °C
-
T _j =25 °C
-
T _j =125 °C
-
(Chip)
T _j =150 °C
-
V_CC=600 V, I_E=75 A, V_GE=±15 V,
-
R_G=8.2 Ω, Inductive load
-
V_CC=600 V, I_C=I_E=75 A,
-
V_GE=±15 V, R_G=8.2 Ω, T _j =150 °C,
-
Inductive load
-
Main terminals-chip, per switch,
T_C=25 °C ^(Note4)
-
Per switch
-
-
1.0
mA
-
0.5
μA
6.0
6.6
V
1.80
2.25
2.00
-
V
2.05
-
1.70
2.15
1.90
-
V
1.95
-
-
7.5
-
1.5
nF
-
0.13
175
-
nC
-
300
-
200
ns
-
600
-
300
1.80
2.25
1.80
-
V
1.80
-
1.70
2.15
1.70
-
V
1.70
-
-
300
ns
4.0
-
μC
7.3
-
mJ
8.0
-
6.9
-
mJ
-
2.4
mΩ
0
-
Ω
Publication Date : September 2012
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