CM1400DUC-24NF Datasheet, PDF (5/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

TEST CIRCUIT AND WAVEFORMS
MITSUBISHI IGBT MODULES
CM1400DUC-24NF
HIGH POWER SWITCHING USE
INSULATED TYPE
Cs1
VGE=15 V
G1
V
Es1
Short- ^Cs2
circuited
G2
Es2
C1
I_C
C2E1
E2
Short- ^Cs1
circuited
G1
Es1
Cs2
VGE=15 V
G2
V
Es2
C1
C2E1
I_C
E2
Short- ^Cs1
circuited
G1
V
Es1
Short- ^Cs2
circuited
G2
Es2
C1
I_E
C2E1
E2
Short- ^Cs1
circuited
G1
Es1
Short- ^Cs2
circuited
G2
V
Es2
C1
C2E1
I_E
E2
+VGE
0V
-V_GE
Tr1
Tr2
V_CEsat test circuit
Di1
Di2
V_EC test circuit
i_E
C1
Cs1
G1
- V_{G E}
E s1
Cs2
R_G ^vCE
G2
Loa d
C2E1
v_GE
0V
+ V_CC
i_C
vGE
E s2
iC
E2
0A
t_{d ( o n)}
t_r
td (off )
Switching characteristics test circuit and waveforms
90 %
0
t
90 %
10%
t_f
t
i_E
I_E
0A
I_rr
Q _{r r}=0.5×I_{r r}×t_rr
t_rr
t
0 .5 ×I _{r r}
t_rr, Q_rr test waveform
I_{C M}
v_{C E}
iC
V_{C C}
i_C
VCE
I_CM
v_{C E}
i_E
I_EM
0A
v_EC
V_{C C}
t
0.1×I_CM
0
0.1×V _CC
0.1 ×V_{C C}
t
0
0.02 ×I_{C M}
t
0V
t
E_on
IGBT Turn-on switching energy
E _off
IGBT Turn-off switching energy
E_{r r}
FWDi Reverse recovery energy
Turn-on / Turn-off switching energy and Reverse recovery energy integral range
5
April-2012