CM1400DUC-24NF Datasheet, PDF (3/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES
CM1400DUC-24NF
HIGH POWER SWITCHING USE
INSULATED TYPE
RECOMMENDED OPERATING CONDITIONS
Symbol
Item
Conditions
V_CC
V_GEon
R_G
(DC) Supply voltage
Gate (-emitter drive) voltage
External gate resistance
Applied across C1-E2
Applied across G1-Es1/G2-Es2
Per switch
Limits
Unit
Min.
Typ.
Max.
-
600
800
V
13.5
15.0
16.5
0.22
-
2.2
Ω
Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).
2. Case temperature (T_C) and heat sink temperature (T _s ) are defined on the each surface of base plate and heat sink
just under the chips. (Refer to the figure of chip location)
The heat sink thermal resistance {R _{t h( s - a)} } should measure just under the chips.
3. Pulse width and repetition rate should be such that the device junction temperature (T _j ) dose not exceed T _{j m a x} rating.
4. Junction temperature (T _j ) should not increase beyond T _{j m a x} rating.
5. Pulse width and repetition rate should be such as to cause negligible temperature rise. (Refer to the figure of test circuit)
6. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
7. The operation temperature is restrained by the permission temperature of female connector housing.
8. Base plate flatness measurement points are as in the following figure.
39 mm
39 mm
Y1
Y2
X
Bottom
Bottom
Label side
-: Concave
Bottom
+: Convex
9. Generally, the company name, the brand name listed in this material are the trademark of the companies or registered tradem
arks.
3
April-2012