CM1400DUC-24NF Datasheet, PDF (2/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES
CM1400DUC-24NF
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (T_j=25 °C, unless otherwise specified)
Symbol
Item
Conditions
V_CES
Collector-emitter voltage
G-E short-circuited
V_GES
I_C
I_CRM
P_tot
IE
IERM
(Note1)
(Note1)
V_isol
T_j
T_stg
Gate-emitter voltage
Collector current
Total power dissipation
Emitter current
(Free wheeling diode forward current)
Isolation voltage
Junction temperature
Storage temperature
C-E short-circuited
DC, TC=94 °C ^(Note2)
Pulse, Repetitive ^(Note3)
TC=25 °C ^{(Note2, 4)}
TC=25 °C ^{(Note2, 4)}
Pulse, Repetitive ^(Note3)
Terminals to base plate, RMS, f=60 Hz, AC 1 min
-
(Note7)
ELECTRICAL CHARACTERISTICS (T _j =25 °C, unless otherwise specified)
Symbol
Item
Conditions
I_CES
I_GES
V_GE(th)
V_CEsat
C_ies
C_oes
C_res
Q_G
t_d(on)
t_r
t_d(off)
t_f
V ^(Note1)
EC
t (Note1)
rr
Q (Note1)
rr
E_on
E_off
E ^(Note1)
rr
R_CC'+EE'
r_g
Collector-emitter cut-off current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Turn-on switching energy per pulse
Turn-off switching energy per pulse
Reverse recovery energy per pulse
Internal lead resistance
Internal gate resistance
VCE=VCES, G-E short-circuited
VGE=VGES, C-E short-circuited
IC=140 mA, VCE=10 V
IC=1400 A ^(Note5) ,
T _j =25 °C
VGE=15 V
T _j =125 °C
VCE=10 V, G-E short-circuited
VCC=600 V, IC=1400 A, VGE=15 V
VCC=600 V, IC=1400 A, VGE=±15 V,
RG=0.22 Ω, Inductive load
I_E=1400 A, G-E short-circuited ^(Note5)
VCC=600 V, IE=1400 A, VGE=±15 V,
R_G=0.22 Ω, Inductive load
V_CC=600 V, I_C=I_E=1400 A,
V_GE=±15 V, R_G=0.22 Ω, T _j =125 °C,
Inductive load
Main terminals-chip, per switch,
TC=25 °C ^(Note2)
Per switch
THERMAL RESISTANCE CHARACTERISTICS
Min.
-
-
6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Symbol
Item
R_th(j-c)Q
R_th(j-c)D
R_th(c-s)
Thermal resistance ^(Note2)
Contact thermal resistance ^(Note2)
Conditions
Junction to case, per IGBT
Junction to case, per FWDi
Case to heat sink, per 1/2 module,
Thermal grease applied ^(Note6)
Min.
-
-
-
MECHANICAL CHARACTERISTICS
Symbol
Item
M_t
Mounting torque
M_s
m
Weight
e_c
Flatness of base plate
Conditions
Min.
Main terminals
M 6 screw
3.5
Mounting to heat sink M 6 screw
3.5
-
-
On the centerline X, Y1, Y2 ^(Note8)
-50
Rating
1200
± 20
1400
2800
8925
1400
2800
2500
-40 ~ +150
-40 ~ +125
Limits
Typ.
-
-
7
1.8
2.0
-
-
-
7200
-
-
-
-
2.5
-
90
122.8
161.2
136.9
0.286
1.0
Max.
1
1.5
8
2.5
-
220
25
4.7
-
800
300
1000
300
3.2
700
-
-
-
-
-
-
Limits
Typ.
-
-
12
Max.
14
23
-
Limits
Typ.
4.0
4.0
1450
-
Max.
4.5
4.5
-
+100
Unit
V
V
A
W
A
V
°C
Unit
mA
μA
V
V
nF
nC
ns
V
ns
μC
mJ
mΩ
Ω
Unit
K/kW
K/kW
K/kW
Unit
N·m
g
μm
2
April-2012