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| CM100DY-34A_09 Datasheet, PDF (5/5 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE | |||
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GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
IC = 100A
VCC = 800V
16
VCC = 1000V
12
8
4
0
0 200 400 600 800 1000
GATE CHARGE QG (nC)
MITSUBISHI IGBT MODULES
CM100DY-34A
HIGH POWER SWITCHING USE
Feb. 2009
5
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