CM100DY-34A_09 Datasheet, PDF (4/5 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

HALF-BRIDGE
SWITCHING CHARACTERISTICS
SWITCHING TIME vs. COLLECTOR CURRENT
(TYPICAL)
10³
7
5
tf
3
td(off)
2
10²
7
5
3
2
10¹
7
5
3
2
101⁰ ₀₁
23
td(on)
tr
5 7 10²
Conditions:
VCC = 1000V
VGE = ±15V
RG = 4.7Ω
Tj = 125°C
Inductive load
2 3 5 7 10³
COLLECTOR CURRENT IC (A)
SWITCHING LOSS vs.
COLLECTOR CURRENT
(TYPICAL)
10³
7 ^Conditions:
5 VCC = 1000V
3 VGE = ±15V
2 _{RG = 4.7Ω}
10^{2 Tj = 125°C}
7 Inductive load
5
Err
3
Eoff
2
Eon
10¹
7
5
3
2
101⁰ _{01 2 3 5 7 102 2 3 5 7 103}
COLLECTOR CURRENT IC (A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
10³
7
5
3
2
10²
7
5
3
2
10¹₁₀₁
23
trr
Irr
5 7 10²
Conditions:
VCC = 1000V
VGE = ±15V
RG = 4.7Ω
Tj = 25°C
Inductive load
2 3 5 7 10³
EMITTER CURRENT IC (A)
4
MITSUBISHI IGBT MODULES
CM100DY-34A
HIGH POWER SWITCHING USE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
SWITCHING TIME vs. GATE RESISTANCE
(TYPICAL)
10³
7 Conditions:

5 _{VCC = 1000V}
3 _{VGE = ±15V}
2 _{IC = 100A}
10^{2 Tj = 125°C}
7 Inductive load
5
tf
3
td(off)
2
10¹
td(on)
7
5
3
tr
2
101⁰ _{00 2 3 5 7 101 2 3 5 7 102}
GATE RESISTANCE RG (Ω)
SWITCHING LOSS vs.
GATE RESISTANCE
(TYPICAL)
10³
Conditions:
7 _{VCC = 1000V}
5 _{VGE = ±15V}
3 ^{IC = 100A}
Tj = 125°C
2 _{Inductive load}
10²
Eon
7
5
3
Eoff
2
Err
101¹ _{00 2 3 5 7 101 2 3 5 7 102}
GATE RESISTANCE RG (Ω)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
10⁰
7
5
3
2
10^–1
7
5
3
2
Single Pulse
Tc= 25°C
Tc measured point is
just under the chips
10^–2
7
5 IGBT part:
3 ^{Per unit base = Rth(j–c) = 0.13K/W}
2 ^{FWDi part:}
Per unit base = Rth(j–c) = 0.21K/ W
10^–3
10^–52 3 5710^–42 3 5710^–32 3 5710^–22 3 5710^–12 3 5710⁰ 2 3 5710¹
TIME (s)
Feb. 2009