CM100DY-34A_09 Datasheet, PDF (3/5 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
200
Tj = 25°C
12
VGE =
15
160
20V
13
120
11
80
10
40
8
9
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
5
VGE = 15V
4
3
2
1
Tj = 25°C
Tj = 125°C
0
0
50
100
150
200
COLLECTOR CURRENT IC (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10³
7
Tj = 25°C
5
Tj = 125°C
3
2
10²
7
5
3
2
10¹
0.5 1 1.5 2 2.5 3 3.5 4
EMITTER-COLLECTOR VOLTAGE VEC (V)
3
MITSUBISHI IGBT MODULES
CM100DY-34A
HIGH POWER SWITCHING USE
TRANSFER CHARACTERISTICS
(TYPICAL)
200
VCE = 10V
160
120
80
40
Tj = 25°C
Tj = 125°C
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
6
IC = 200A
IC = 100A
4
2
IC = 40A
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE VGE (V)
CAPACITANCE–VCE
CHARACTERISTICS
(TYPICAL)
10²
7
5
3
2
Cies
10¹
7
5
3
2
10⁰
7
5
3
2
VGE = 0V
10^–₁¹_{0–1 2 3 5 7 100 2 3}
Coes
Cres
5 7 10¹ 2 3 5 710²
COLLECTOR-EMITTER VOLTAGE VCE (V)
Feb. 2009