BCR5PM Datasheet, PDF (5/5 Pages) Mitsubishi Electric Semiconductor – LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE

BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100120 140
JUNCTION TEMPERATURE (°C)
COMMUTATION CHARACTERISTICS
10²
TYPICAL
7 _EXAMPLE
5
4
Tj = 125°C
3 ^{IT = 4A}
τ = 500µs
2 _{VD = 200V}
f = 3Hz
10¹
VOLTAGE WAVEFORM
t
(dv/dt)C VD
CURRENT WAVEFORM
IT
(di/dt)C
τ
t
7
5
4
3 ^MINIMUM
2 ^CHARAC-
TERISTICS
I QUADRANT
III QUADRANT
10^{0 VALUE}
10⁰ 2 3 4 5 7 10¹ 2 3 4 5 7 10²
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A /ms)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω
6Ω
6V
A
6V
A
V
RG
V
RG
TEST PROCEDURE 1 TEST PROCEDURE 2
6Ω
6V
A
V
RG
TEST PROCEDURE 3
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR5PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
160
TYPICAL EXAMPLE
140
Tj = 125°C
120
100
80
60
III QUADRANT
40
I QUADRANT
20
0
10¹ 2 3 5 7 10² 2 3 5 7 10³ 2 3 5 7 10⁴
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
10³
TYPICAL EXAMPLE
7
5
IRGT III
4
3
2 ^{IRGT I}
10²
7 ^{IFGT I}
5
4
3
2
10¹
10⁰ 2 3 4 5 7 10¹ 2 3 4 5 7 10²
GATE CURRENT PULSE WIDTH (µs)
Feb.1999