BCR5PM Datasheet, PDF (1/5 Pages) Mitsubishi Electric Semiconductor – LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE

BCR5PM
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR5PM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
OUTLINE DRAWING
10.5 MAX
5.2
Dimensions
in mm
2.8
TYPE
NAME
VOLTAGE
CLASS
φ3.2±0.2
1.3 MAX
0.8
2.54
2.54
0.5
2.6
• IT (RMS) ........................................................................ 5A
• VDRM ..............................................................400V/600V
• IFGT !, IRGT !, IRGT # ......................... 20mA (10mA) ^V5
• Viso ........................................................................ 1500V
• UL Recognized: File No. E80276
123
2
∗ Measurement point of
case temperature
1 T1 TERMINAL
2 T2 TERMINAL
3 3 GATE TERMINAL
1
TO-220F
APPLICATION
Switching mode power supply, light dimmer, electric flasher unit,
control of household equipment such as TV sets · stereo · refrigerator · washing machine · infrared
kotatsu · carpet, solenoid drivers, small motor control,
copying machine, electric tool,
other general purpose control applications
MAXIMUM RATINGS
Symbol
Parameter
Voltage class
Unit
8
12
VDRM
Repetitive peak off-state voltage ^V1
400
600
V
VDSM
Non-repetitive peak off-state voltage ^V1
500
720
V
Symbol
IT (RMS)
ITSM
I^2t
Parameter
RMS on-state current
Surge on-state current
I^2t for fusing
PGM
Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM
Peak gate voltage
IGM
Peak gate current
Tj
Junction temperature
Tstg
Storage temperature
—
Weight
Viso
Isolation voltage
V1. Gate open.
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=95°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case
Ratings
Unit
5
A
50
A
10.4
A²s
3
W
0.3
W
10
V
2
A
–40 ~ +125
°C
–40 ~ +125
°C
2.0
g
1500
V
Feb.1999