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BCR5PM Datasheet, PDF (3/5 Pages) Mitsubishi Electric Semiconductor – LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
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GATE CHARACTERISTICS
102
7
5
3
2 VGM = 10V
101
7
5
PGM =
3
2
VGT = 1.5V
0.3W
Tj = 25°C
100
7
5
IGT = 20mA
PGM = 3W
IGM = 2A
3
2
10–1
VGD = 0.2V
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
GATE CURRENT (mA)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
103
7
TYPICAL EXAMPLE
5
4
3
2
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
103
7
5
NO FINS
3
2
102
7
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
1012 3 5 71022 3 5 71032 3 5 71042 3 5 7 105
CONDUCTION TIME
(CYCLES AT 60Hz)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR5PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
103
7
TYPICAL EXAMPLE
5
4
IRGT III
3
IRGT I
2
102
IFGT I
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
102 2 3 5 7 103 2 3 5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM ON-STATE POWER
DISSIPATION
10
9
8 360°
7 CONDUCTION
6 RESISTIVE,
INDUCTIVE
5 LOADS
4
3
2
1
0
0 1 2 3 4 5 6 7 8 9 10
RMS ON-STATE CURRENT (A)
Feb.1999
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