QM100DY-24K Datasheet, PDF (4/5 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
10 ²
7
5
4
VCC=600V
IB1=2A
IC=100A
ts
3
2
10 ¹
7
5
4
tf
3
2
10 ⁰
10 ^–1 2 3 4 5 7 10⁰
Tj=25°C
Tj=125°C
2 3 4 5 7 10¹
BASE REVERSE CURRENT –IB2 (A)
FORWARD BIAS SAFE OPERATING AREA
10 ³
7
5
50µs
3
100µs
2
10 ²
7
5
3
2
10 ¹
7
5
3
2
TC=25°C
10 ^{0 NON–REPETITIVE}
10 ⁰ 2 3 4 5 7 10 ¹ 2 3 4 5 7 10 ² 2 3 4 5 7 10 ³
COLLECTOR-EMITTER VOLTAGE VCE (V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
10 ⁰ 2 3 4 5 710 ¹ 2 3 4 5 7
0.25
0.20
0.15
0.10
0.05
0
10 ^–3 2 3 4 5 710 ^–2 2 3 4 5 710 ^–12 3 4 5 7 10 ⁰
TIME (s)
MITSUBISHI TRANSISTOR MODULES
QM100DY-24K
HIGH POWER SWITCHING USE
INSULATED TYPE
REVERSE BIAS SAFE OPERATING AREA
320
Tj=125°C
280
240
200
160
IB2=–2A
120
80
40
0
0
400
800 1200 1600
COLLECTOR-EMITTER VOLTAGE VCE (V)
DERATING FACTOR OF F. B. S. O. A.
100
SECOND
90
BREAKDOWN
AREA
80
70
60
50
COLLECTOR
40
DISSIPATION
30
20
10
0
0 20 40 60 80 100 120 140 160
CASE TEMPERATURE TC (°C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
10 ^{3 CHARACTERISTICS) (TYPICAL)}
7
5
3
2
10 ²
7
5
3
2
10 ¹
7
5
3
2
10 ⁰
0
Tj=25°C
Tj=125°C
0.4 0.8 1.2 1.6 2.0
COLLECTOR-EMITTER REVERSE VOLTAGE
–VCEO (V)
Feb.1999