QM100DY-24K Datasheet, PDF (2/5 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI TRANSISTOR MODULES
QM100DY-24K
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
VCEX (SUS)
VCEX
VCBO
VEBO
IC
–IC
PC
IB
–ICSM
Tj
Tstg
Viso
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
Conditions
IC=1A, VEB=2V
VEB=2V
Emitter open
Collector open
DC
DC (forward diode current)
TC=25°C
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
—
Mounting torque
Main terminal screw M6
Mounting screw M6
—
Weight
Typical value
Ratings
1200
1200
1200
7
100
100
800
5
1000
–40~+150
–40~+125
2500
1.96~2.94
20~30
1.96~2.94
20~30
470
Unit
V
V
V
V
A
A
W
A
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Symbol
Parameter
Test conditions
ICEX
ICBO
IEBO
VCE (sat)
VBE (sat)
–VCEO
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Collector cutoff current
VCE=1200V, VEB=2V
Collector cutoff current
VCB=1200V, Emitter open
Emitter cutoff current
VEB=7V
Collector-emitter saturation voltage
IC=100A, IB=2A
Base-emitter saturation voltage
Collector-emitter reverse voltage –IC=100A (diode forward voltage)
DC current gain
IC=100A, VCE=5V
Switching time
VCC=600V, IC=100A, IB1=–IB2=2A
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Transistor part (per 1/2 module)
Diode part (per 1/2 module)
Conductive grease applied (per 1/2 module)
Min.
—
—
—
—
—
—
75
—
—
—
—
—
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
2.0
400
3.0
3.5
1.8
—
3.0
15
3.0
0.155
0.65
—
— 0.075
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/ W
°C/ W
°C/ W
Feb.1999