QM100DY-24K Datasheet, PDF (3/5 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
200
160
120
IB=2A
IB=1A
IB=0.5A
80
IB=0.1A
IB=0.2A
40
Tj=25°C
0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE VCE (V)
10 ¹
7
5
3
2
10 ⁰
7
5
3
2
10 ^–1
7
5
3
2
10 ^–2
1.8
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
VCE=2.8V
Tj=25°C
2.2 2.6 3.0 3.4 3.8
BASE-EMITTER VOLTAGE VBE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
5
IC=50A
IC=100A
4
IC=70A
3
2
1
Tj=25°C
Tj=125°C
0
10 ^–2 2 3 45 710 ^–1 2 3 4 5 7 10 ⁰ 2 3 45 7 10 ¹
BASE CURRENT IB (A)
MITSUBISHI TRANSISTOR MODULES
QM100DY-24K
HIGH POWER SWITCHING USE
INSULATED TYPE
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
10 ⁴
7
5
3
2
VCE=5.0V
10 ³
7
5
VCE=2.8V
3
2
10 ²
7
5
3
2
Tj=25°C
10 ¹
Tj=125°C
10 ⁰ 2 3 4 5 710 ¹ 2 3 4 5 7 10 ² 2 3 4 5 7 10 ³
COLLECTOR CURRENT IC (A)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
10 ¹
7
5
4
3
VBE(sat)
2
10 ⁰
VCE(sat)
7
5
4
3
2
10 ^–1
10 ¹
2 3 4 5 7 10²
IB=2A
Tj=25°C
Tj=125°C
2 3 4 5 7 10³
COLLECTOR CURRENT IC (A)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
10 ²
7
5
3
2
ts
10 ¹
7
5
tf
3
2
ton
10 ⁰
7
5
3
2
VCC=600V
Tj=25°C
10 ^{–1 IB1=–IB2=2A}
Tj=125°C
10 ⁰ 2 3 4 5 7 10 ¹ 2 3 4 5 7 10 ² 2 3 4 5 7 10 ³
COLLECTOR CURRENT IC (A)
Feb.1999