FY8ACH-02A Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
5.0
TCh = 25°C
ID = 8A
4.0
VDS = 7V
10V
15V
3.0
2.0
1.0
0
0
8
16 24 32 40
GATE CHARGE Qg (nC)
MITSUBISHI Nch POWER MOSFET
FY8ACH-02A
HIGH-SPEED SWITCHING USE
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
50
VGS = 0V
Pulse Test
40
30
TCh = 125°C
75°C
20
25°C
10
0
0
0.4 0.8 1.2 1.6 2.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
10¹
VGS = 4V
7 _{ID = 8A}
5 _{Pulse Test}
3
2
10⁰
7
5
3
2
10^–1
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
2.0
VDS = 10V
ID = 1mA
1.6
1.2
0.8
0.4
0
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
0.4
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
10²
7
5 ^{D = 1.0}
3
2
0.5
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
10¹ 0.2
7
5 0.1
3
2
PDM
10⁰
7
0.05
5
0.02
3
0.01
2
Single Pulse
tw
T
D= ^tw
T
10^–1
10^–42 3 5 710^–32 3 5 710^–22 3 5 710^–12 3 5 710⁰ 2 3 5 710¹ 2 3 5 710² 2 3 5 710³
PULSE WIDTH tw (s)
Sep.1998