FY8ACH-02A Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

MITSUBISHI Nch POWER MOSFET
FY8ACH-02A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-a)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
VGS = ±10V, VDS = 0V
VDS = 20V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 8A, VGS = 4V
ID = 4A, VGS = 2.5V
ID = 8A, VGS = 4V
ID = 8A, VDS = 10V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 10V, ID = 4A, VGS = 4V, RGEN = RGS = 50Ω
IS = 1.7A, VGS = 0V
Channel to ambient
IS = 1.7A, dis/dt = –50A/µs
Limits
Unit
Min.
Typ. Max.
20
—
—
V
—
—
±0.1 µA
—
—
0.1
mA
0.5
0.9
1.3
V
—
17
22
mΩ
—
23
36
mΩ
—
0.140 0.176 V
—
22
—
S
—
1700
—
pF
—
510
—
pF
—
360
—
pF
—
26
—
ns
—
85
—
ns
—
190
—
ns
—
180
—
ns
—
0.75
1.1
V
—
—
69.4 °C/W
—
100
—
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
2.0
1.6
1.2
0.8
0.4
0
0
50
100
150
200
MAXIMUM SAFE OPERATING AREA
7
5
tw = 10µs
3
2
100µs
10¹
7
5
3
2
10⁰
7
5
3
2
TC = 25°C
10^–1 Single Pulse
7
23
5 7 10⁰ 2 3
1ms
10ms
100ms
DC
5 7 10¹ 2 3 5 7 10² 2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
50
VGS = 5V
4V
3V
40
TC = 25°C
Pulse Test
2.5V
30
2V
20
10
1.5V
PD = 1.8W
0
0
0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
20
2V
TC = 25°C
16
Pulse Test
VGS = 5V
4V
12
3V
2.5V
8
1.5V
4
PD = 1.8W
0
0
0.2 0.4 0.6 0.8 1.0
DRAIN-SOURCE VOLTAGE VDS (V)
Sep.1998