FY8ACH-02A Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
2.0
TC = 25°C
Pulse Test
1.6
1.2
0.8
ID = 16A
8A
0.4
4A
0
0 1.0 2.0 3.0 4.0 5.0
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
50
TC = 25°C
VDS = 10V
Pulse Test
40
30
20
10
0
0 1.0 2.0 3.0 4.0 5.0
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
10⁴
7
5
4
3
2
Ciss
10³
7
5
4
3
2 ^{TCh = 25°C}
f = 1MHZ
10^{2 VGS = 0V}
10^–1 2 3 4 5
7 10⁰
Coss
Crss
2 3 4 5 7 10¹
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Nch POWER MOSFET
FY8ACH-02A
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
40
TC = 25°C
Pulse Test
32
VGS = 2.5V
24
4V
16
8
0
10^–1 2 3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10²
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
10²
VDS = 10V
7 _{Pulse Test}
5
4
3
TC = 25°C
75°C
125°C
2
10¹
7
5
4
3
2
10⁰_{100 2 3 4 5 7 101 2 3 4 5 7 102}
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
10²
TCh = 25°C
7 _{VDD = 10V}
5 VGS = 4V
4 _{RGEN = RGS = 50Ω}
3
td(off)
2
tf
10¹
7
tr
5
4
3
td(on)
2
101⁰_{0–1 2 3 4 5 7 100 2 3 4 5 7 101}
DRAIN CURRENT ID (A)
Sep.1998