FY4ADJ-03A Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
–10
TCh = 25°C
ID = –4A
–8
VDS = –10V
–20V
–6
–25V
–4
–2
0
0
4
8
12 16 20
GATE CHARGE Qg (nC)
MITSUBISHI Pch POWER MOSFET
FY4ADJ-03A
HIGH-SPEED SWITCHING USE
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
–20
VGS = 0V
Pulse Test
–16
TC = 125°C
–12
75°C
25°C
–8
–4
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
10¹
VGS = –10V
7 _{ID = –4A}
5 _{Pulse Test}
3
2
10⁰
7
5
3
2
10^–1
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
–4.0
VDS = –10V
ID = –1mA
–3.2
–2.4
–1.6
–0.8
0
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = –1mA
1.2
1.0
0.8
0.6
0.4
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
10²
7
5
D = 1.0
3 _0.5
2
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
10^{1 0.2}
7
5
0.1
3
2
PDM
10⁰
0.05
7
5
0.02
0.01
3
Single Pulse
2
tw
T
D= ^tw
T
10^–1
10^–42 3 5 710^–32 3 5 710^–22 3 5 710^–12 3 5 710⁰ 2 3 5 710¹ 2 3 5 710² 2 3 5 710³
PULSE WIDTH tw (s)
Sep.1998