FY4ADJ-03A Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
–2.0
TC = 25°C
Pulse Test
–1.6
–1.2
–0.8
–0.4
0
0
ID = –8A
–4A
–2A
–2 –4 –6 –8 –10
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
–20
TC = 25°C
VDS = –10V
Pulse Test
–16
–12
–8
–4
0
0
–2 –4 –6 –8 –10
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
10³
Ciss
7
5
4
3
Coss
2
10²
7
5
4
3
2 ^{TCh = 25°C}
f = 1MHZ
10^{1 VGS = 0V}
–10^–1 –2 –3 –4 –5 –7–10⁰
Crss
–2 –3 –4 –5 –7–10¹
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Pch POWER MOSFET
FY4ADJ-03A
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
200
TC = 25°C
Pulse Test
VGS = –4V
160
120
80
–10V
40
0
–10^–1 –2 –3 –5–7 –10⁰ –2 –3 –5–7–10¹ –2 –3 –5–7 –10²
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
10²
VDS = –10V
7 _{Pulse Test}
5
4
3
2
TC = 25°C
75°C
10¹
125°C
7
5
4
3
2
10–⁰_{100 –2 –3 –4 –5 –7–101 –2 –3 –4 –5 –7–102}
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
10²
7
td(off)
5
4
3
tf
2
td(on)
10¹
7
5
tr
4
3 _{TCh = 25°C}
2 ^{VDD = –15V}
VGS = –10V
10^{0 RGEN = RGS = 50Ω}
–10^–1 –2 –3 –4 –5 –7–10⁰
–2 –3 –4 –5 –7–10¹
DRAIN CURRENT ID (A)
Sep.1998