FY4ADJ-03A Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

MITSUBISHI Pch POWER MOSFET
FY4ADJ-03A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-a)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = –1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = –30V, VGS = 0V
ID = –1mA, VDS = 10V
ID = –4A, VGS = –10V
ID = –2A, VGS = –4V
ID = –4A, VGS = –10V
ID = –4A, VDS = –10V
VDS = –10V, VGS = 0V, f = 1MHz
VDD = –15V, ID = –2A, VGS = –10V, RGEN = RGS = 50Ω
IS = –1.7A, VGS = 0V
Channel to ambient
IS = –1.7A, dis/dt = 50A/µs
Min.
–30
—
—
–1.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Limits
Typ.
—
—
—
–2.0
60
115
–0.24
6
680
180
90
10
15
50
30
–0.88
—
70
Max.
—
±0.1
–0.1
–2.5
80
180
–0.32
—
—
—
—
—
—
—
—
–1.20
78.1
—
Unit
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
2.0
1.6
1.2
0.8
0.4
0
0
50
100
150
200
MAXIMUM SAFE OPERATING AREA
–3
–2
–10¹
–7
–5
–3
–2
tw = 100µs
1ms
–10⁰
–7
–5
–3
–2
10ms
100ms
–10^–1
–7 TC = 25°C
–5 _{Single Pulse}
DC
–3
–2 –3
–5–7–10⁰
–2 –3
–5–7–10¹ –2 –3
–5–7–10²
–2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
–20
VGS = –10V –8V –6V
–5V
–16
OUTPUT CHARACTERISTICS
(TYPICAL)
–10
VGS = –10V –8V –6V –5V
–8
–4V
–12
–4V
–8
TC = 25°C
Pulse Test
–4
–3V
PD = 1.6W
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
DRAIN-SOURCE VOLTAGE VDS (V)
–6
TC = 25°C
Pulse Test
–4
–3V
–2
PD = 1.6W
0
0 –0.2 –0.4 –0.6 –0.8 –1.0
DRAIN-SOURCE VOLTAGE VDS (V)
Sep.1998