FY10AAJ-03A Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
10
TCh = 25°C
ID = 10A
8
VDS = 15V
20V
25V
6
4
2
0
0
10 20 30 40 50
GATE CHARGE Qg (nC)
MITSUBISHI Nch POWER MOSFET
FY10AAJ-03A
HIGH-SPEED SWITCHING USE
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
50
VGS = 0V
Pulse Test
40
30
TC = 125°C
75°C
25°C
20
10
0
0
0.4 0.8 1.2 1.6 2.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
10¹
VGS = 10V
7 _{ID = 10A}
5 _{Pulse Test}
3
2
10⁰
7
5
3
2
10^–1
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
4.0
VDS = 10V
ID = 1mA
3.2
2.4
1.6
0.8
0
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
0.4
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
10²
7
5 _{D = 1.0}
3
2 0.5
10¹
7
0.2
5 _0.1
3
2 ^0.05
10⁰ 0.02
7
5 _0.01
PDM
3
2
tw
10^–1
7
5
Single Pulse
3
2
T
D= ^tw
T
10^–2
10^–42 3 5 710^–32 3 5 710^–22 3 5 710^–12 3 5 710⁰ 2 3 5 710¹ 2 3 5 710² 2 3 5 710³
PULSE WIDTH tw (s)
Sep.1998