FY10AAJ-03A Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

MITSUBISHI Nch POWER MOSFET
FY10AAJ-03A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-a)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 30V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 10A, VGS = 10V
ID = 5A, VGS = 4V
ID = 10A, VGS = 10V
ID = 10A, VDS = 10V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 15V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω
IS = 2.3A, VGS = 0V
Channel to ambient
IS = 2.3A, dis/dt = –50A/µs
Limits
Unit
Min.
Typ. Max.
30
—
—
V
—
—
±0.1 µA
—
—
0.1
mA
1.0
1.5
2.0
V
—
9.5
13.5 mΩ
—
15
20.0 mΩ
—
0.095 0.135 V
—
20
—
S
—
1800
—
pF
—
650
—
pF
—
280
—
pF
—
25
—
ns
—
45
—
ns
—
125
—
ns
—
90
—
ns
—
0.75
1.10
V
—
—
62.5 °C/W
—
45
—
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
2.5
2.0
1.5
1.0
0.5
0
0
50
100
150
200
MAXIMUM SAFE OPERATING AREA
2
10²
7
5
tw = 100µs
3
2
10¹
7
1ms
5
3
2
10ms
10⁰
7
5
100ms
3
2
10^–1
7
5
TC = 25°C
DC
3 ^{Single Pulse}
2
23
5710⁰ 2 3
5710¹ 2 3
5710² 2 3
5710³ 2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
50
4V
40
TC = 25°C
VGS = 10V Pulse Test
8V
6V
30
3.5V
20
3V
10
PD = 2W
0
0
0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
20
TC = 25°C
Pulse Test
16
VGS = 10V
8V
6V
4V
12
3.5V
3V
8
4
PD = 2W
0
0
0.2 0.4 0.6 0.8 1.0
DRAIN-SOURCE VOLTAGE VDS (V)
Sep.1998