FY10AAJ-03A Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
1.0
TC = 25°C
Pulse Test
0.8
0.6
0.4
ID = 20A
0.2
10A
5A
0
0
2
4
6
8
10
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
50
TC = 25°C
VDS = 10V
Pulse Test
40
30
20
10
0
0
2
4
6
8
10
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
10⁴
7
5
3
Ciss
2
10³
Coss
7
5
Crss
3
2
10²
7
5
3 TCh = 25°C
2 f = 1MHZ
10^{1 VGS = 0V}
10^–1 2 3 5 7 10⁰ 2 3
5 7 10¹ 2 3
5 7 10²
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Nch POWER MOSFET
FY10AAJ-03A
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
40
TC = 25°C
Pulse Test
32
24
16
VGS = 4V
10V
8
0
10^–1 2 3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10²
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
10²
VDS = 10V
7 _{Pulse Test}
5
4
3
TC = 25°C
75°C
125°C
2
10¹
7
5
4
3
2
10⁰_{100 2 3 4 5 7 101 2 3 4 5 7 102}
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
10⁴
7
5
4
3
2
td(off)
10³ tf
7
5
4
3 tr
2 _td(on)
10²_{100 2}
TCh = 25°C
VDD = 15V
VGS = 10V
RGEN = RGS = 50Ω
3 4 5 7 10¹ 2 3 4 5 7 10²
DRAIN CURRENT ID (A)
Sep.1998