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FX50SMJ-2 Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE | |||
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PRELIMINARY NSootimcee: pTahriasmisentroict alimfinitsalasrpeescuifbicjeactitotno. change.
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
â10
â8
VDS =
â6
â20V
â40V
â4
â80V
â2
Tch = 25°C
ID = â50A
0
0
40 80 120 160 200
GATE CHARGE Qg (nC)
MITSUBISHI Pch POWER MOSFET
FX50SMJ-2
HIGH-SPEED SWITCHING USE
â100
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
â80
TC =
25°C
â60
75°C
125°C
â40
VGS = 0V
â20
Pulse Test
0
0 â0.4 â0.8 â1.2 â1.6 â2.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7
5
3
2
100
7
VGS = â10V
5
ID = 1/2ID
Pulse Test
3
2
10â1
â50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
â4.0
â3.2
â2.4
â1.6
VDS = â10V
ID = â1mA
â0.8
0
â50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
1.2
1.0
0.8
VGS = 0V
ID = â1mA
0.6
0.4
â50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
101
7
5
3
2
100 D = 1.0
7
5
0.5
3
0.2
2
PDM
10â1
7
5
3
2
0.1
0.05
0.02
0.01
Single Pulse
tw
T
D= tw
T
10â2
10â42 3
5 710â32 3
5 710â22 3
5 710â12 3
5 7 100 2 3
5 7 101 2 3
5 7 102
PULSE WIDTH tw (s)
Jan.1999
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