FX50SMJ-2 Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

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MITSUBISHI Pch POWER MOSFET
FX50SMJ-2
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = –1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = –100V, VGS = 0V
ID = –1mA, VDS = –10V
ID = –25A, VGS = –10V
ID = –25A, VGS = –4V
ID = –25A, VGS = –10V
ID = –25A, VDS = –10V
VDS = –10V, VGS = 0V, f = 1MHz
VDD = –50V, ID = –25A, VGS = –10V, RGEN = RGS = 50Ω
IS = –25A, VGS = 0V
Channel to case
IS = –50A, dis/dt = 100A/µs
Min.
–100
—
—
–1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Limits
Typ.
—
—
—
–1.5
39
47
–0.98
49.2
11130
896
480
57
118
828
380
–1.0
—
100
Max.
—
±0.1
–0.1
–2.0
50
61
–1.25
—
—
—
—
—
—
—
—
–1.5
0.83
—
Unit
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
250
200
150
100
50
0
0
50
100
150
200
MAXIMUM SAFE OPERATING AREA
–3
–2
–10²
–7
–5
tw =
10µs
–3
–2
–10¹
–7
–5
TC = 25°C
100µs
Single Pulse
–3
1ms
–2
10ms
DC
–10⁰
–7
–5
–3
–2 –3 –5–7–10⁰ –2 –3 –5–7–10¹ –2 –3 –5–7–10² –2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
–100
–80
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS =
–10V
–8V Tc = 25°C
–6V ^{Pulse Test}
–5V
–60
–4V
–40
–3V
–20
PD = 150W
0
0
–2 –4 –6 –8 –10
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
–50
VGS =
–10V
–4V
–40
–8V
–6V
–5V
–30
PD = 150W
–20
–3V
–10
Tc = 25°C
Pulse Test
0
0 –1.0 –2.0 –3.0 –4.0 –5.0
DRAIN-SOURCE VOLTAGE VDS (V)
Jan.1999