FX50SMJ-2 Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

PRELIMINARY _{NSootimcee: pTahriasmisentroict} ^{alimfinitsalasrpeescuifbicjeactitotno. change.}
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
–10
Tc = 25°C
Pulse Test
–8
–6
ID = –100A
–4
–2
–50A
–25A
0
0
–2 –4 –6 –8 –10
GATE-SOURCE VOLTAGE VGS (V)
–100
TRANSFER CHARACTERISTICS
(TYPICAL)
–80
–60
Tc = 25°C
VDS = –10V
Pulse Test
–40
–20
0
0
–2 –4 –6 –8 –10
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
2
Ciss
10⁴
7
5
Tch = 25°C
VGS = 0V
3
f = 1MHZ
2
10³
Coss
7
5
Crss
3
2
–3
–5 –7–10⁰
–2 –3
–5 –7–10¹
–2 –3
–5 –7–10²
–2 –3
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Pch POWER MOSFET
FX50SMJ-2
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
100
80
60
VGS = –4V
40
–10V
Tc = 25°C
20
Pulse Test
0
–10⁰ –2 –3 –5 –7–10¹ –2 –3 –5 –7–10²
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
10²
7 ^{TC =}
5
25°C 75°C 125°C
3
2
VDS = –10V
10¹
Pulse Test
7
5
3
2
10–⁰_{100 –2 –3 –5 –7–101 –2 –3 –5 –7–102}
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
2
10³
7
5
3
2 ^{Tch = 25°C}
VGS = –10V
VDD = –50V
10² RGEN = RGS = 50Ω
7
5
td(off)
tf
tr
td(on)
3
2
–7–10⁰
–2 –3 –5 –7–10¹
–2 –3 –5 –7
DRAIN CURRENT ID (A)
Jan.1999