FG2000FX-50DA Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER INVERTER USE PRESS PACK TYPE

TURN OFF TIME, TURN OFF STORAGE TIME
VS. TURN OFF CURRENT
(TYPICAL)
30
tgq
25
ts
20
15
VD = 1250V
VDM = 1875V
diGQ/dt = –30A/µs
10
VRG = 17V
CS = 4.0µF
LS = 0.3µH
5
Tj = 125°C
0 500 1000 1500 2000 2500
TURN OFF CURRENT (A)
TURN OFF GATE CURRENT
VS. TURN OFF CURRENT
(TYPICAL)
700
600
500
400
300
200
0
VD = 1250V
VDM = 1875V
diGQ/dt = –30A/µs
VRG = 17V
CS = 4.0µF
LS = 0.3µH
Tj = 125°C
500 1000 1500 2000 2500
TURN OFF CURRENT (A)
TURN ON SWITCHING ENERGY
(MAXIMUM)
1.6
VD = 1250V
1.4 ^{IGM = 30A}
diG/dt = 10A/µs
1.2
CS = 4.0µF
RS = 5Ω
1.0 ^{Tj = 125°C}
diT/dt = 500A /µs
300A /µs
0.8
200A /µs
0.6
100A /µs
0.4
0.2
0
0 500 1000 1500 2000 2500
TURN ON CURRENT (A)
MITSUBISHI GATE TURN-OFF THYRISTORS
FG2000FX-50DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
TURN OFF TIME, TURN OFF STORAGE TIME
VS. RATE OF RISE OF TURN OFF GATE CURRENT
(TYPICAL)
50
40
30
tgq
20 VD = 1250V
VDM = 1875V
ts
IT = 2200A
10 ^{VRG = 17V}
CS = 4.0µF
LS = 0.3µH
Tj = 125°C
0
10 20 30 40 50 60
RATE OF RISE OF TURN OFF GATE CURRENT (A/µS)
TURN OFF GATE CURRENT VS.
RATE OF RISE OF GATE CURRENT
(TYPICAL)
800
700
600
500
VD = 1250V
VDM = 1875V
IT = 2200A
400
VRG = 17V
CS = 4.0µF
LS = 0.3µH
Tj = 125°C
300
10 20 30 40 50 60
RATE OF RISE OF TURN OFF GATE CURRENT (A/µS)
TURN OFF SWITCHING ENERGY
(MAXIMUM)
3.0
2.5
2.0
1.5
1.0
0.5
0
0
VD = 1250V
VDM = 1875V
diGQ/dt = –30A/µs
VRG = 17V
CS = 4.0µF
LS = 0.3µH
Tj = 125°C
500 1000 1500 2000 2500
TURN OFF CURRENT (A)
Aug.1998