FG2000FX-50DA Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER INVERTER USE PRESS PACK TYPE

MITSUBISHI GATE TURN-OFF THYRISTORS
FG2000FX-50DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
VTM
IRRM
IDRM
IRG
dv/dt
tgt
On-state voltage
Repetitive peak reverse current
Repetitive peak off-state current
Reverse gate current
Critical rate of rise of off-state voltage
Turn-on time
Tj = 125°C, ITM = 2000A, Instantaneous measurment
Tj = 125°C, VRRM Applied
Tj = 125°C, VDRM Applied, VGK = –2V
Tj = 125°C, VRG = 17V
Tj = 125°C, VD = 1250V, VGK = –2V
Tj = 125°C, ITM = 2200A, IGM = 30A, VD = 1250V
tgq
IGQM
VGT
IGT
Rth(j-f)
Turn-off time
Peak gate turn-off current
Gate trigger voltage
Gate trigger current
Thermal resistance
Tj = 125°C, ITM = 2200A, VDM = 1875V, diGQ/dt = –30A/µs
VRG = 17V, CS = 4.0µF, LS = 0.3µH
DC METHOD : VD = 24V, RL = 0.1Ω, Tj = 25°C
Junction to fin
Min
—
—
—
—
1000
—
—
—
—
—
—
Limits
Typ
—
—
—
—
—
—
—
610
—
—
—
Max
2.4
50
50
50
—
10
30
—
1.5
2500
0.017
Unit
V
mA
mA
mA
V/µs
µs
µs
A
V
mA
°C/W
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTIC
10⁴
7 Tj = 125°C
5
3
2
10³
7
5
3
2
10²
7
5
3
2
10¹
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
ON-STATE VOLTAGE (V)
GATE CHARACTERISTICS
10²
7
5
3
2 VFGM = 10V
10¹
7
5
PFG(AV) = 50W
PFGM = 280W
3 ^{VGT = 1.5V}
2
10⁰
7
Tj = 25°C
5
3 ^{IGT = 2500mA}
2
IFGM = 100A
10^–1
10² 2 3 5 7 10³ 2 3 5 7 10⁴ 2 3 5 7 10⁵
GATE CURRENT (mA)
RATED SURGE ON-STATE CURRENT
20
16
12
8
4
0
10⁰ 2 3 5 7 10¹ 2 3 5 7 10²
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM THERMAL IMPEDANCE
CHARACTERISTIC
(JUNCTION TO FIN)
10⁰ 2 3 5 710¹
0.020
0.016
0.012
0.008
0.004
0
10^–3 2 3 5 710^–2 2 3 5 710^–1 2 3 5 7 10⁰
TIME (S)
Aug.1998