FG2000FX-50DA Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER INVERTER USE PRESS PACK TYPE

MAXIMUM ON-STATE POWER DISSIPATION
CHARACTERISTICS
(SINGLE-PHASE HALF WAVE)
4000
3500
θ
3000 _360°
RESISTIVE,
2500 INDUCTIVE
LOAD
2000
θ = 30°
1500
60° ^{90° 120° 180°}
1000
500
0
0
300
600
900 1200
AVERAGE ON-STATE CURRENT (A)
MAXIMUM ON-STATE POWER DISSIPATION
CHARACTERISTICS
(RECTANGULAR WAVE)
4000
3500
DC
270°
3000
2500
2000
180°
120°
90°
60°
θ = 30°
1500
1000
500
0
0
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
500 1000 1500 2000
AVERAGE ON-STATE CURRENT (A)
8000
7000
6000
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
(TYPICAL)
VD = 5 ~ 20V
IT = 25 ~ 200A
HALF SINE WAVE
5000
4000
3000
2000
1000
0
–60 –20 20
60 100 140
JUNCTION TEMPERATURE (°C)
MITSUBISHI GATE TURN-OFF THYRISTORS
FG2000FX-50DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
ALLOWABLE FIN TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
160
150
θ
140
360°
130
RESISTIVE,
120
INDUCTIVE
LOAD
110
100
90
80
70
θ = 30° 60° 90° 120° 180°
60
0 200 400 600 800 1000 1200
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE FIN TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
130
120
θ
110
360°
RESISTIVE,
100
INDUCTIVE
LOAD
90
80
70
60 ^{θ = 30° 60° 90° 180°}
120° 270° DC
50
0
500 1000 1500
2000
AVERAGE ON-STATE CURRENT (A)
TURN ON TIME, TURN ON DELAY TIME
VS. TURN ON GATE CURRENT
(TYPICAL)
10.0
9.0
8.0
IT = 2200A
VD = 1250V
diT/dt = 500A/µs
diG/dt = 10A/µs
7.0
Tj = 125°C
6.0
5.0
tgt
4.0
3.0
td
2.0
1.0
0
0 10 20 30 40 50 60 70 80 90 100
TURN ON GATE CURRENT (A)
Aug.1998