CM900HB-90H_09 Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM900HB-90H
HIGH POWER SWITCHING USE
INSULATED TYPE
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
5
3 VCC = 2250V, VGE = ±15V
2 _{RG = 10Ω, Tj = 125°C}
10^{1 Inductive load}
7
5
3
2
10⁰
7
5
td(off)
td(on)
tr
3
tf
2
10^–1
7
5
5
7 10²
23
5 7 10³
23
5
COLLECTOR CURRENT IC (A)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
7.0
VCC = 2250V, VGE = ±15V,
Eon
6.0 ^{RG = 10Ω, Tj = 125°C,}
Inductive load
5.0
4.0
Eoff
3.0
2.0
1.0
Erec
0
0 300 600 900 1200 1500 1800
CURRENT (A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
10¹
10⁵
7 VCC = 2250V, Tj = 125°C
7
5 _{Inductive load}
5
3 _{IGBT drive conditions}
3
2 _{VGE = ±15V, RG = 10Ω}
2
10⁰
trr
10⁴
7
7
5
5
3
3
2
2
10^–1
7
5
3
2
Irr
10³
7
5
3
2
10^–2
5
7 10²
23
5 7 10³
23
10²
5
EMITTER CURRENT IE (A)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
3.0
2.5
2.0
1.5
1.0
0.5
0
0 5 10 15 20 25 30
GATE RESISTANCE (Ω)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
VCC = 2250V
IC = 900A
16
12
8
4
0
0 2000 4000 6000 8000 10000 12000
GATE CHARGE QG (nC)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
10¹
7 Single Pulse
5 _{TC = 25°C}
3 Rth(j – c)Q = 0.009K/ W
2 _{Rth(j – c)R = 0.018K/ W}
10⁰
7
5
3
2
10^–1
7
5
3
2
10^–2
10^–3 2 3 5 7 10^–2 2 3 5 7 10^–1 2 3 5 7 10⁰
TIME (s)
Mar. 2003