CM900HB-90H_09 Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM900HB-90H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
1800
Tj = 25°C
VGE=12V
1500
VGE=20V
VGE=10V
1200 ^VGE=15V
VGE=14V
900
600
VGE=8V
300
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE VCE (V)
12000
10000
TRANSFER CHARACTERISTICS
(TYPICAL)
VCE = 10V
8000
6000
4000
2000
Tj = 25°C
Tj = 125°C
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
8
VGE = 15V
6
4
2
Tj = 25°C
Tj = 125°C
0
0 300 600 900 1200 1500 1800
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
6
Ic=1800A
4
Ic=900A
2
Ic=450A
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE VGE (V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
8
6
4
2
Tj = 25°C
Tj = 125°C
0
0 300 600 900 1200 1500 1800
EMITTER CURRENT IE (A)
CAPACITANCE CHARACTERISTICS
(TYPICAL)
10³
7
5
3
2
Cies
10²
7
5
3
2
10¹
7
Coes
5
3 ^{VGE = 15V, Tj = 25°C}
2 ^{Cies, Coes : f = 100kHz}
Cres
Cres
: f = 1MHz
10⁰
10^–1 2 3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10²
COLLECTOR-EMITTER VOLTAGE VCE (V)
Mar. 2003