CM900HB-90H_09 Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI HVIGBT MODULES
CM900HB-90H
HIGH POWER SWITCHING USE
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
CM900HB-90H
q IC ................................................................... 900A
q VCES ....................................................... 4500V
q Insulated Type
q 1-element in a pack
APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
57±0.25
190
171
57±0.25
57±0.25
6 - M8 NUTS
C
C
C
C
C
C
C
G
E
E
E
E
CM
E
E
C_EG
3 - M4 NUTS
20.25
41.25
79.4
61.5
61.5
13
E
CIRCUIT DIAGRAM
8 - φ7MOUNTING HOLES
15
40
5.2
LABEL
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Mar. 2003