CM900DU-24NF_09 Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10³
td(off)
7
5
tf
td(on)
3
2
10²
7
5
Conditions:
VCC = 600V
tr
3 ^{VGE = ±15V}
2
RG = 0.35Ω
Tj = 125°C
Inductive load
10¹
10¹ 2 3 5 7 10²
23
5 7 10³
COLLECTOR CURRENT IC (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
10₇¹¹⁰_S^–3_i2ng3le5P7u¹_ls⁰_e^{–22 3 5 710–12 3 5 7100 2 3 5 7 101}
5 IGBT part:
3 ^{Per unit base = Rth(j–c’) = 0.021K/ W}
2 ^{FWDi part:}
10^{0 Per unit base = Rth(j–c’) = 0.034K/ W}
7
5
3
2
10^–1
7
5
3
2
10^–1
7
5
3
3
2
2
10^–2
7
5
3
2
10^–3
TC measured
point is just
under the chips
10^–2
7
5
3
2
10^–3
10^–52 3 5 710^–42 3 5 710^–3
TIME (s)
IC-ESW
(TYPICAL)
10³
7 Conditions:
5 _{VCC = 600V}
3 _{VGE = ±15V}
2 _{Tj = 125°C}
10^{2 RG = 0.35Ω}
7 Inductive load
5
Err
3
2
10¹
7
5
3
2
10⁰_{101 2 3 5 7 102 2 3}
Eon
Eoff
5 7 10³
IC (A)
4
MITSUBISHI IGBT MODULES
CM900DU-24NF
HIGH POWER SWITCHING USE
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
10³
7
5
3
Irr
2
trr
10²
7
5
3
2
10¹
10¹
23
5 7 10²
Conditions:
VCC = 600V
VGE = ±15V
RG = 0.35Ω
Tj = 25°C
Inductive load
2 3 5 7 10³
EMITTER CURRENT IE (A)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
IC = 900A
VCC = 400V
16
VCC = 600V
12
8
4
0
0 1000 2000 3000 4000 5000 6000 7000
GATE CHARGE QG (nC)
RG-ESW
(TYPICAL)
10³
7
5
3
2
10²
7
5
Conditions:
VCC = 600V
3 ^{VGE = ±15V}
2 ^{Tj = 125°C}
IC = 900A
Inductive load
10¹
0
0.5
1
1.5
RG (Ω)
Eon
Eoff
Err
2 2.5
Feb. 2009