CM900DU-24NF_09 Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

PERFORMANCE CURVES
1800
1600
1400
1200
1000
800
600
400
200
0
0
OUTPUT CHARACTERISTICS
(TYPICAL)
VGE = 20V
15V
13V
Tj = 25°C
12V
11V
10V
8V _9V
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
5
VGE = 15V
4
3
2
1
Tj = 25°C
Tj = 125°C
0
0 200 400 600 800 1000 1200 1400 1600 1800
COLLECTOR CURRENT IC (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10⁴
7
5
3
2
10³
7
5
3
2
Tj = 25°C
Tj = 125°C
10²
0
1
2
3
4
EMITTER-COLLECTOR VOLTAGE VEC (V)
3
MITSUBISHI IGBT MODULES
CM900DU-24NF
HIGH POWER SWITCHING USE
1800
1600
TRANSFER CHARACTERISTICS
(TYPICAL)
VCE = 10V
1400
1200
1000
800
600
400
200
Tj = 25°C
Tj = 125°C
0
0
4
8
12 16
20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
6
IC = 900A
4
IC = 1800A
2
IC = 360A
0
6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE VGE (V)
CAPACITANCE–VCE
CHARACTERISTICS
(TYPICAL)
10³
7
5
3
2
10²
Cies
7
5
3
2
10¹
7
5
3
2
10⁰
7
5
3
2 VGE = 0V
Coes
Cres
10^–₁¹_{0–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7102}
COLLECTOR-EMITTER VOLTAGE VCE (V)
Feb. 2009