CM900DU-24NF_09 Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

MITSUBISHI IGBT MODULES
CM900DU-24NF
HIGH POWER SWITCHING USE
MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
Symbol
VCES
VGES
IC
ICM
IE (Note 1)
IEM (Note 1)
PC (Note 3)
Tj
Tstg
Viso
—
—
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature^*4
Isolation voltage
Torque strength
Weight
G-E Short
C-E Short
TC’ = 96°C^*1
Pulse
TC = 25°C
Pulse
TC = 25°C
Conditions
(Note 2)
(Note 2)
Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M6 screw
Mounting M6 screw
Typical value
Ratings
1200
±20
900
1800
900
1800
2550
–40 ~ +150
–40 ~ +125
2500
3.5 ~ 4.5
3.5 ~ 4.5
1400
Unit
V
V
A
A
W
°C
°C
Vrms
N•m
N•m
g
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
Parameter
ICES
Collector cutoff current
Test conditions
VCE = VCES, VGE = 0V
Limits
Min.
Typ.
—
—
VGE(th) Gate-emitter threshold voltage IC = 90mA, VCE = 10V
6
7
IGES
Gate leakage current
±VGE = VGES, VCE = 0V
—
—
VCE(sat)
(chip)
Collector-emitter saturation voltage
(without lead resistance)
IC = 900A, VGE = 15V
Tj = 25°C
(Note 4) _{Tj = 125°C}
—
1.8
—
2.0
R(lead)
Module lead resistance
Ic = 900A, terminal-chip
—
0.286
Cies
Coes
Cres
QG
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
VCE = 10V
VGE = 0V
VCC = 600V, IC = 900A, VGE = 15V
—
—
—
—
—
—
—
4800
td(on)
Turn-on delay time
—
—
tr
Turn-on rise time
VCC = 600V, IC = 900A
—
—
td(off)
tf
Turn-off delay time
Turn-off fall time
VGE = ±15V
RG = 0.35Ω, Inductive load
—
—
—
—
trr (Note 1) Reverse recovery time
IE = 900A
—
—
Qrr (Note 1) Reverse recovery charge
—
50
VEC(Note 1) Emitter-collector voltage
(chip)
(without lead resistance)
IE = 900A, VGE = 0V
—
—
Rth(j-c)Q _{Thermal resistance*3}
IGBT part (1/2 module)
—
Rth(j-c)R
FWDi part (1/2 module)
—
Rth(c-f)
Contact thermal resistance^*2 Case to heat sink, Thermal compound applied (1/2 module)
—
—
—
0.016
Rth(j-c’)Q _{Thermal resistance*1}
Rth(j-c’)R
Case temperature measured point is just under the chips (IGBT part) —
—
Case temperature measured point is just under the chips (FWDi part) —
—
RG
External gate resistance
0.35
—
Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
*^{1 : Case temperature (Tc’) measured point is just under the chips.}
If you use this value, Rth(f-a) should be measured just under the chips.
*^{2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].}
*^{3 : Case temperature (Tc) measured point is shown in page OUTLINE DRAWING.}
*^{4 : The operation temperature is restrained by the permission temperature of female connector.}
Max.
1
8
1
2.5
—
—
140
16
3
—
600
200
800
300
500
—
3.2
0.049
0.078
—
0.021
0.034
2.2
Unit
mA
V
µA
V
mΩ
nF
nC
ns
ns
µC
V
K/W
Ω
Feb. 2009
2