CM75DY-34A Datasheet, PDF (4/5 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE

HALF-BRIDGE
SWITCHING CHARACTERISTICS
SWITCHING TIME vs. COLLECTOR CURRENT
10³
7
tf
td(off)
5
3
2
10²
td(on)
7
5
3
2
tr
Conditions:
10¹
7
5
VCC = 1000V
VGE = ±15V
3 ^{RG = 6.4Ω}
2 ^{Tj = 125°C}
Inductive load
101⁰ _{00 2 3 5 7 101}
23
5 7 10²
COLLECTOR CURRENT IC (A)
SWITCHING LOSS vs.
COLLECTOR CURRENT
10²
Conditions:
7 _{VCC = 1000V}
5 _{VGE = ±15V}
3 ^{RG = 6.4Ω}
Tj = 125°C
2 _{Inductive load}
10¹
7
5
Err
Eoff
3
Eon
2
101⁰ _{00 2 3 5 7 101 2 3 5 7 102}
COLLECTOR CURRENT IC (A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
10³
7 ^Conditions:
5
VCC = 1000V
VGE = ±15V
3 RG = 6.4Ω
2 ^{Tj = 25°C}
Inductive load
10²
7
Irr
5
trr
3
2
10¹_{100 2 3 5 7 101 2 3 5 7 102}
EMITTER CURRENT IC (A)
4
MITSUBISHI IGBT MODULES
CM75DY-34A
HIGH POWER SWITCHING USE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
SWITCHING TIME vs. GATE RESISTANCE
10³
7
5
tf
3
td(off)
2
10²
7
5
3
2
10¹
10⁰
td(on)
tr
2 3 5 7 10¹
Conditions:
VCC = 1000V
VGE = ±15V
IC = 75A
Tj = 125°C
Inductive load
2 3 5 7 10²
GATE RESISTANCE RG (Ω)
SWITCHING LOSS vs.
GATE RESISTANCE
10³
Conditions:
7 _{VCC = 1000V}
5 _{VGE = ±15V}
3 ^{IC = 75A}
Tj = 125°C
2 _{Inductive load}
10²
7
5
3
2
101¹ ₀₀
Err
Eoff
Eon
2 3 5 7 10¹
23
5 7 10²
GATE RESISTANCE RG (Ω)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
10⁰
7
5
3
2
10^–1
7
5
3
2
Single Pulse
Tc= 25°C
Tc measured point is
just under the chips
10^–2
7
5 IGBT part:
3 ^{Per unit base = Rth(j–c) = 0.16°C/W}
2 ^{FWDi part:}
Per unit base = Rth(j–c) = 0.29°C/ W
10^–3
10^–52 3 5710^–42 3 5710^–32 3 5710^–22 3 5710^–12 3 5710⁰ 2 3 5710¹
TIME (s)
Jun. 2007