CM75DY-34A Datasheet, PDF (2/5 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE

ABSOLUTE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
Symbol
VCES
VGES
IC
ICM
IE (Note 1)
IEM (Note 1)
PC (Note 3)
Tj
Tstg
Viso
—
—
—
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Torque strength
Weight
G-E Short
C-E Short
DC, TC = 111°C^*1
Pulse
Operation
Pulse
TC = 25°C^*1
Conditions
Main terminal to base plate, AC 1 min.
Main terminal M5
Mounting holes M6
Typical value
MITSUBISHI IGBT MODULES
CM75DY-34A
HIGH POWER SWITCHING USE
(Note 2)
(Note 2)
(Note 2)
(Note 2)
Ratings
1700
±20
75
150
75
150
780
–40 ~ +150
–40 ~ +125
3500
2.5 ~ 3.5
3.5 ~ 4.5
310
Unit
V
V
A
A
W
°C
°C
V
N•m
g
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
Parameter
Test conditions
Min.
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
—
Gate-emitter threshold
VGE(th)
voltage
IC = 7.5mA, VCE = 10V
5.5
IGES
Gate leakage current
±VGE = VGES, VCE = 0V
—
Collector to emitter saturation Tj = 25°C
—
VCE(sat) _voltage
Tj = 125°C
IC = 75A, VGE = 15V
—
Cies
Input capacitance
—
Coes
Output capacitance
VCE = 10V
—
Cres
Reverse transfer capacitance ^{VGE = 0V}
—
QG
Total gate charge
VCC = 1000V, IC = 75A, VGE = 15V
—
td(on)
Turn-on delay time
—
tr
Turn-on rise time
VCC = 1000V, IC = 75A
—
td(off)
Turn-off delay time
VGE1 = VGE2 = 15V
—
tf
Turn-off fall time
RG = 6.4Ω, Inductive load switching operation
—
trr (Note 1) Reverse recovery time
IE = 75A
—
Qrr (Note 1) Reverse recovery charge
—
VEC(Note 1) Emitter-collector voltage
IE = 75A, VGE = 0V
—
Rth(j-c)Q
Rth(j-c)R
Thermal resistance
IGBT part (1/2 module)^*1
FWDi part (1/2 module)^*1
—
—
Rth(c-f)
Contact thermal resistance
Case to fin, Thermal compound applied (1/2 module)^*1,*2
—
RG
External gate resistance
6.4
Limits
Typ.
—
7.0
—
2.2
2.45
—
—
—
500
—
—
—
—
—
7.5
—
—
—
0.022
—
*^{1 : Tc, Tf measured point is just under the chips.}
*^{2 : Typical value is measured by using Shin-Etsu Chemical Co.,Ltd “G-746”.}
Note 1. IE, IEM, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Max.
1
8.5
2.0
2.8
—
18.5
2.1
0.4
—
200
150
550
350
300
—
3.0
0.16
0.29
—
64
Unit
mA
V
µA
V
nF
nC
ns
µC
V
°C/W
Ω
Jun. 2007
2