CM75DY-34A Datasheet, PDF (3/5 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE

PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
150
Tj = 25°C
12
VGE =
15
20V
13
100
11
50
10
8
9
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
5
VGE = 15V
4
3
2
1
Tj = 25°C
Tj = 125°C
0
0
50
100
150
COLLECTOR CURRENT IC (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
10³
7
Tj = 25°C
5
Tj = 125°C
3
2
10²
7
5
3
2
10¹
7
5
3
2
10⁰
0.5 1 1.5 2 2.5 3 3.5 4
EMITTER-COLLECTOR VOLTAGE VEC (V)
3
MITSUBISHI IGBT MODULES
CM75DY-34A
HIGH POWER SWITCHING USE
TRANSFER CHARACTERISTICS
150
VCE = 10V
100
50
Tj = 25°C
Tj = 125°C
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
10
Tj = 25°C
8
6
IC = 150A
IC = 75A
4
2
IC = 30A
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE VGE (V)
CAPACITANCE–VCE
CHARACTERISTICS
10²
7
5
3
2
Cies
10₇¹
5
3
2
10⁰
7
5
3
2
10^–1
7
5
Coes
Cres
3
2 _{VGE = 0V}
10^–₁²_{0–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7102}
COLLECTOR-EMITTER VOLTAGE VCE (V)
Jun. 2007