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CM600HN-5F_09 Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
◁
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
104
VCC = 100V
7
VGE = ±10V
5
RG = 4.2Ω
3
Tj = 125°C
2
103
td(off)
td(on)
7
5
tf
3
2
tr
102
101 2 3 5 7 102 2 3 5 7 103
COLLECTOR CURRENT IC (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part)
101
7
5
Single Pulse
3 TC = 25°C
2 Per unit base = Rth(j – c) = 0.07K/ W
100
7
5
3
2
10–1
7
5
3
2
10–2
7
5
3
2
10–3
10–32 3 5 710–22 3 5 710–12 3 5 710–02 3 5 7101
TIME (s)
MITSUBISHI IGBT MODULES
CM600HN-5F
HIGH POWER SWITCHING USE
INSULATED TYPE
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
103
103
–di/dt = 1200A/µs
7 Tj = 25°C
7
5
5
3
3
2
trr 2
102
lrr 102
7
7
5
5
3
3
2
2
101
101
101
2 3 5 7 102 2 3 5 7 103
EMITTER CURRENT IE (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)
101
7
5
Single Pulse
3 TC = 25°C
2 Per unit base = Rth(j – c) = 0.11K/ W
100
7
5
3
2
10–1
7
5
3
2
10–2
7
5
3
2
10–3
10–32 3 5 710–22 3 5 710–12 3 5 710–02 3 5 7101
TIME (s)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
25
IC = 600A
20
VCC = 50V
15
VCC = 100V
10
5
0
0123456
GATE CHARGE QG (µC)
4
Mar. 2009