CM600HN-5F_09 Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
1200
Tj=25°C
6
5.75
10
1000
8
VGE=15
5.5
(V)
800
600
5.25
400
5
200
4.75
4.5
0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
2.5
VGE = 10V
Tj = 25°C
2.0
Tj = 125°C
1.5
1.0
0.5
0
0 200 400 600 800 1000 1200
COLLECTOR CURRENT IC (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10⁴
7
Tj = 25°C
5
3
2
10³
7
5
3
2
10²
7
5
3
2
10¹
0.6 0.8 1.0 1.2 1.4 1.6 1.8
EMITTER-COLLECTOR VOLTAGE VEC (V)
MITSUBISHI IGBT MODULES
CM600HN-5F
HIGH POWER SWITCHING USE
INSULATED TYPE
TRANSFER CHARACTERISTICS
(TYPICAL)
1200
VCE = 10V
1000
800
600
400
200
Tj = 25°C
Tj = 125°C
0
0
2
4
6
8
10
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
5
Tj = 25°C
4
3
IC = 1200A
IC = 600A
2
1
IC = 240A
0
0
5
10
15
GATE-EMITTER VOLTAGE VGE (V)
CAPACITANCE CHARACTERISTICS
(TYPICAL)
10³
7 ^{VGE = 0V}
5
3
2
Cies
10²
7
5
3
2
10¹
7
5
3
2
10⁰
10^–1 2 3
5 7 10⁰ 2 3
Coes
Cres
5 7 10¹ 2 3 5 7 10²
COLLECTOR-EMITTER VOLTAGE VCE (V)
Mar. 2009
3