CM600HN-5F_09 Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES
CM600HN-5F
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
Symbol
Item
VCES
Collector-emitter voltage
VGES
Gate-emitter voltage
IC
Collector current
ICM
IE (Note 1) _{Emitter current}
IEM (Note 1)
PC (Note 3) Maximum collector dissipation
Tj
Junction temperature
Tstg
Storage temperature
Viso
Isolation voltage
—
Mounting torque
—
Weight
Conditions
G-E Short
C-E Short
TC = 25°C
Pulse
(Note 2)
TC = 25°C
Pulse
(Note 2)
TC = 25°C
—
—
Charged part to base plate, sinusoidal, AC 60Hz 1min.
Main terminals M6 screw
Mounting M6 screw
G(E) auxiliary terminal M4 screw
Typical value
Ratings
250
±20
600
1200
600
1200
1780
–40 ~ +150
–40 ~ +125
2500
1.96 ~ 2.94
1.96 ~ 2.94
0.98 ~ 1.47
400
Unit
V
V
A
A
A
A
W
°C
°C
Vrms
N·m
N·m
N·m
g
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
Item
Test Conditions
Limits
Min
Typ
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
—
—
VGE(th)
Gate-emitter
threshold voltage
IC = 60mA, VCE = 10V
3
4
IGES
Gate-leakage current
VGE = VGES, VCE = 0V
—
—
VCE(sat)
Collector-emitter
saturation voltage
Tj = 25°C
Tj = 150°C
IC = 600A, VGE = 10V
—
1.2
(Note 4) _—
1.1
Cies
Coes
Cres
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 10V
VGE = 0V
—
—
—
—
—
—
QG
Total gate charge
VCC = 100V, IC = 600A, VGE = 10V
—
2200
td (on)
Turn-on delay time
VCC = 100V, IC = 600A
—
—
tr
Turn-on rise time
VGE1 = VGE2 = 10V
—
—
td (off)
Turn-off delay time
RG = 4.2Ω
—
—
tf
Turn-off fall time
Resistive load
—
—
VEC(Note 1) Emitter-collector voltage
IE = 600A, VGE = 0V
—
—
trr (Note 1) Reverse recovery time
IE = 600A,
—
—
Qrr (Note 1) Reverse recovery charge
die / dt = –1200A / µs
—
9.5
Rth(j-c)Q
Rth(j-c)R
Thermal resistance
Junction to case, IGBT part
Junction to case, FWDi part
—
—
—
—
Rth(c-f) Contact thermal resistance Case to fin, conductive grease applied
—
—
Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode.
2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Max
1
5
0.5
1.7
—
165
7.5
5.6
—
1000
4000
1000
500
2.0
300
—
0.07
0.11
0.04
Unit
mA
V
µA
V
nF
nF
nF
nC
ns
ns
ns
ns
V
ns
µC
K/W
K/W
K/W
Mar. 2009
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