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CM350DU-5F_09 Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE | |||
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HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
103
td(off)
7
td(on)
5
tf
3
2
102
tr
7
5
3 Tj = 125°C
2
VCC = 100V
VGE = ±10V
RG = 7.1â¦
101101 2 3 5
7 102
23
5 7 103
COLLECTOR CURRENT IC (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part)
10â32 3 5 710â22 3 5 710â12 3 5 7100 2 3 5 7 101
101
7
5
Single Pulse
3 TC = 25°C
2 Per unit base = Rth(j â c) = 0.13K/ W
100
7
5
3
3
2
2
10â1
7
5
10â1
7
5
3
3
2
2
10â2
7
5
10â2
7
5
3
3
2
2
10â3
10â3
10â52 3 5 710â42 3 5 710â3
TIME (s)
MITSUBISHI IGBT MODULES
CM350DU-5F
HIGH POWER SWITCHING USE
INSULATED TYPE
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
103
103
7 â di /dt = 700A /µs
7
5 Tj = 25°C
5
3
3
trr
2
2
102
102
7
Irr
7
5
5
3
3
2
2
101101
101
2 3 5 7 102 2 3 5 7 103
EMITTER CURRENT IE (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)
10â32 3 5 710â22 3 5 710â12 3 5 7100 2 3 5 7 101
101
7
5
Single Pulse
3 TC = 25°C
2 Per unit base = Rth(j â c) = 0.19K/ W
100
7
5
3
3
2
2
10â1
7
5
10â1
7
5
3
3
2
2
10â2
7
5
10â2
7
5
3
3
2
2
10â3
10â3
10â52 3 5 710â42 3 5 710â3
TIME (s)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
IC = 350A
15
VCC = 50V
VCC = 100V
10
5
0
0 0.5 1.0 1.5 2.0 2.5
GATE CHARGE QG (nC)
4
Feb. 2009
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