CM350DU-5F_09 Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
700
Tj = 25°C
5.75
600 VGE=15
(V)
10
8
6
5.5
500
400
300
5.25
200
5
100
4.75
4.5
0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
2.0
VGE = 10V
Tj = 25°C
Tj = 125°C
1.5
1.0
0.5
0
0 100 200 300 400 500 600 700
COLLECTOR CURRENT IC (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
7
5 ^{Tj = 25°C}
3
2
10²
7
5
3
2
10¹
7
0.6 0.8 1.0 1.2 1.4 1.6 1.8
EMITTER-COLLECTOR VOLTAGE VEC (V)
MITSUBISHI IGBT MODULES
CM350DU-5F
HIGH POWER SWITCHING USE
INSULATED TYPE
TRANSFER CHARACTERISTICS
(TYPICAL)
700
VCE = 10V
600
500
400
300
200
100
Tj = 25°C
Tj = 125°C
0
0
2
4
6
8
10
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
5
Tj = 25°C
4
3
IC = 700A
2
IC = 350A
IC = 140A
1
0
0
5
10
15
20
GATE-EMITTER VOLTAGE VGE (V)
CAPACITANCE CHARACTERISTICS
(TYPICAL)
10²
7
5
Cies
3
2
10¹
7
5
3
Coes
2
10⁰
7
5
3
2
VGE = 0V
10^–₁¹_{0–1 2 3 5 7 100 2 3}
Cres
5 7 10¹ 2 3 5 7 10²
COLLECTOR-EMITTER VOLTAGE VCE (V)
Feb. 2009
3