CM350DU-5F_09 Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES
CM350DU-5F
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
Symbol
Parameter
VCES
Collector-emitter voltage
VGES
Gate-emitter voltage
IC
Collector current
ICM
IE (Note 1) _{Emitter current}
IEM (Note 1)
PC (Note 3) Maximum collector dissipation
Tj
Junction temperature
Tstg
Storage temperature
Viso
Isolation voltage
—
Torque strength
—
Weight
Conditions
G-E Short
C-E Short
TC = 25°C
Pulse
(Note 2)
TC = 25°C
Pulse
(Note 2)
TC = 25°C
—
—
Charged part to base plate, f = 60Hz, AC 1 minute
Main terminals M6 screw
Mounting M6 screw
Typical value
Ratings
250
±20
350
700
350
700
960
–40 ~ +150
–40 ~ +125
2500
1.96 ~ 2.94
1.96 ~ 2.94
520
Unit
V
V
A
A
A
A
W
°C
°C
Vrms
N•m
N•m
g
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
Parameter
Test conditions
Limits
Min
Typ
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
—
—
VGE(th)
Gate-emitter
threshold voltage
IC = 35mA, VCE = 10V
3.0
4.0
IGES
Gate-leakage current
±VGE = VGES, VCE = 0V
—
—
VCE(sat)
Collector-emitter
saturation voltage
IC = 350A, VGE = 10V
Tj = 25°C
—
(Note 4) _{Tj = 125°C}
—
1.2
1.10
Cies
Coes
Cres
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 10V
VGE = 0V
—
—
—
—
—
—
QG
Total gate charge
VCC = 100V, IC = 350A, VGE = 10V
—
1320
td (on)
Turn-on delay time
VCC = 100V, IC = 350A
—
—
tr
Turn-on rise time
VGE = ±10V
—
—
td (off)
Turn-off delay time
RG = 7.1Ω
—
—
tf
Turn-off fall time
Resistive load
—
—
VEC(Note 1)
trr (Note 1)
Qrr (Note 1)
Rth(j-c)Q
Rth(j-c)R
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance (Note 5)
IE = 350A, VGE = 0V
IE = 350A,
die / dt = –700A / µs
Junction to case, IGBT part (Per 1/2 module)
Junction to case, FWDi part (Per 1/2 module)
—
—
—
—
—
5.7
—
—
—
—
Rth(c-f)
Contact thermal resistance
Case to heat sink, conductive grease applied
—
(Per 1/2 module)
(Note 6)
0.02
Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. Case temperature (Tc) measured point is indicated in OUTLINE DRAWING.
6. Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].
Max
1
5.0
0.5
1.7
—
99
4.5
3.4
—
1100
2400
900
500
2.0
300
—
0.13
0.19
—
Unit
mA
V
µA
V
nF
nF
nF
nC
ns
ns
ns
ns
V
ns
µC
K/W
K/W
K/W
Feb. 2009
2