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CM1400DU-24NF Datasheet, PDF (4/5 Pages) Powerex Power Semiconductors – Mega Power Dual™ IGBTMOD 1400 Amperes/1200 Volts
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HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
104
7
5
3
2
103
7
5
3
2
102
7
5
3 tr
2
101
102
23
td(off)
td(on)
tf
5 7 103
Conditions:
VCC = 600V
VGE = ±15V
RG = 0.22Ω
Tj = 125°C
Inductive load
2 3 5 7 104
COLLECTOR CURRENT IC (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
10–32 3 5 710–22 3 5 710–12 3 5 7100 2 3 5 7 101
101
7 IGBT part:
5 Per unit base = Rth(j–c) = 0.032°C/ W
3 FWDi part:
2 Per unit base = Rth(j–c) = 0.053°C/ W
100
7
5
3
3
2
2
10–1
7
5
10–1
7
5
3
3
2
2
10–2
7
5
3
2
10–3
Single Pulse
TC = 25°C
10–2
7
5
3
2
10–3
10–52 3 5 710–42 3 5 710–3
TMIE (s)
103
7
5
3
2
102
7
5
3
2
101
7
5
3
2
100102
23
IC-ESW
(TYPICAL)
Esw(off)
Esw(on)
5 7 103
Conditions:
VCC = 600V
VGE = ±15V
Tj = 125°C
RG = 0.22Ω
Inductive load
2 3 5 7 104
IC (A)
MITSUBISHI IGBT MODULES
CM1400DU-24NF
HIGH POWER SWITCHING USE
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
103
7
Irr
5
3
trr
2
102
7
5
3
2
101
102
23
5 7 103
Conditions:
VCC = 600V
VGE = ±15V
RG = 0.22Ω
Tj = 125°C
Inductive load
2 3 5 7 104
EMITTER CURRENT IE (A)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
IC = 1400A
16
VCC = 400V
12
VCC = 600V
8
4
0
0 2000 4000 6000 8000 10000
GATE CHARGE QG (nC)
103
7
5
3
2
102
7
5
3
2
101
7
5
3
2
100
0
RG-ESW
(TYPICAL)
Esw(off)
Esw(on)
Conditions:
VCC = 600V
VGE = ±15V
Tj = 125°C
IC = 1400A
Inductive load
0.5
1
1.5
2
2.5
RG (Ω)
Mar. 2003
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