CM1400DU-24NF Datasheet, PDF (2/5 Pages) Powerex Power Semiconductors – Mega Power Dual™ IGBTMOD 1400 Amperes/1200 Volts

MAXIMUM RATINGS (Tj = 25°C)
Symbol
VCES
VGES
IC
ICM
IE (Note 1)
IEM (Note 1)
PC (Note 3)
Tj
Tstg
Viso
—
—
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Torque strength
Weight
G-E Short
C-E Short
TC = 25°C
Pulse
TC = 25°C
Pulse
TC = 25°C
Conditions
Main terminal to base plate, AC 1 min.
Main Terminal M6
Mounting holes M6
Typical value
MITSUBISHI IGBT MODULES
CM1400DU-24NF
HIGH POWER SWITCHING USE
(Note 2)
(Note 2)
Ratings
1200
±20
1400
2800
1400
2800
3900
–40 ~ +150
–40 ~ +125
2500
3.5 ~ 4.5
3.5 ~ 4.5
1400
Unit
V
V
A
A
W
°C
°C
V
N•m
N•m
g
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
Parameter
Test conditions
Min.
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
—
VGE(th) Gate-emitter threshold voltage IC = 140mA, VCE = 10V
6
IGES
Gate leakage current
VGE = VCES, VCE = 0V
—
Tj = 25°C
—
VCE(sat)
Collector-emitter saturation voltage
Tj = 125°C
IC = 1400A, VGE = 15V
—
R(lead)
Module lead resistance
Ic = 1400A, terminal-chip
—
Cies
Input capacitance
—
VCE = 10V
Coes
Output capacitance
—
VGE = 0V
Cres
Reverse transfer capacitance
—
QG
Total gate charge
VCC = 600V, IC = 1400A, VGE = 15V
—
td(on)
Turn-on delay time
—
tr
Turn-on rise time
VCC = 600V, IC = 1400A
—
td(off)
Turn-off delay time
VGE1 = VGE2 = 15V
—
tf
Turn-off fall time
RG = 0.22Ω, Inductive load switching operation
—
trr (Note 1) Reverse recovery time
IE = 1400A
—
Qrr (Note 1) Reverse recovery charge
—
VEC(Note 1) Emitter-collector voltage
IE = 1400A, VGE = 0V
—
Rth(j-c)Q _{Thermal resistance*1}
IGBT part (1/2 module)
—
Rth(j-c)R
FWDi part (1/2 module)
—
Rth(c-f)
Contact thermal resistance Case to fin, Thermal compound applied^*2 (1/2 module)
—
Rth(j-c’)Q
Thermal resistance
Rth(j-c’)R
Tc measured point is just under the chips (IGBT part)
—
Tc measured point is just under the chips (FWDi part)
—
RG
External gate resistance
0.22
Note 1. IE, VEC, trr, Qrr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
*^{1 : Tc measured point is indicated in OUTLINE DRAWING.}
*^{2 : Typical value is measured by using Shin-etsu Silicone “G-746”.}
*^{3 : If you use this value, Rth(f-a) should be measured just under the chips.}
Limits
Typ.
—
7
—
1.8
2.0
0.143
—
—
—
7200
—
—
—
—
—
90
—
—
—
0.016
—
—
—
Unit
Max.
1
mA
8
V
0.5
2.5
—
—
220
25
4.7
—
800
300
1000
300
700
—
3.4
0.032
0.053
—
0.014^*3
0.023^*3
2.2
µA
V
mΩ
nF
nC
ns
ns
µC
V
°C/W
Ω
Mar. 2003