CM1400DU-24NF Datasheet, PDF (3/5 Pages) Powerex Power Semiconductors – Mega Power Dual™ IGBTMOD 1400 Amperes/1200 Volts

PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
2800
2500
15V
(TYPICAL)
VGE = 20V
13V
Tj = 25°C
12V
2000
1500
11V
1000
10V
500
8V _9V
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
5
VGE = 15V
4
3
2
1
Tj = 25°C
Tj = 125°C
0
0 500 1000 1500 2000 2500 2800
COLLECTOR CURRENT IC (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10⁴
7
5
3
2
10³
7
5
3
2
Tj = 25°C
Tj = 125°C
10²
0
1
2
3
4
EMITTER-COLLECTOR VOLTAGE VEC (V)
MITSUBISHI IGBT MODULES
CM1400DU-24NF
HIGH POWER SWITCHING USE
TRANSFER CHARACTERISTICS
(TYPICAL)
VCE = 10V
2500
2000
1500
1000
500
Tj = 25°C
Tj = 125°C
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
6
IC = 1400A
4
IC = 2800A
2
IC = 560A
0
6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE VGE (V)
CAPACITANCE–VCE
CHARACTERISTICS
(TYPICAL)
10³
7
5
3
2
Cies
10²
7
5
3
2
10¹
7
5
3
2
VGE = 0V
101⁰_{0–1 2 3 5 7 100 2 3}
Coes
Cres
5 7 10¹ 2 3 5 710²
COLLECTOR-EMITTER VOLTAGE VCE (V)
Mar. 2003