BCR5AM Datasheet, PDF (4/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR5AM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
ALL FINS ARE BLACK PAINTED
140
ALUMINUM AND GREASED
120 120 t2.3
120
100 100 t2.3
100
60 60 t2.3
80
60
NATURAL
40 CONVECTION
CURVES APPLY
20 _{REGARDLESS OF}
RESISTIVE,
INDUCTIVE
CONDUCTION ANGLE LOADS
0
012345678
RMS ON-STATE CURRENT (A)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
10⁵
7 TYPICAL EXAMPLE
5
3
2
10⁴
7
5
3
2
10³
7
5
3
2
10²
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
10³
7
5
T2⁺,
T2^– ,
G⁺
G^–

TYPICAL
EXAMPLE
3
2
10²
7
5
3
2
10¹
7
5
3
2
,,,,,,,,^DIS,,,,,,,,^TR,,,,,,,,^IBU,,,,,,,,^TIO,,,,,,,,^N,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,^TTE2YX+,PA,,,,,,,,^GIMC–,,,,,,,,^PALLE
10⁰
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
NATURAL CONVECTION
140
NO FINS
CURVES APPLY REGARDLESS
120
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE LOADS
100
80
60
40
20
0
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
RMS ON-STATE CURRENT (A)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
10²
7
5
4
3
2
10¹
7
5
4
3
2
VD = 12V
,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,^D,,,,,,,,,,^IST,,,,,,,,,,^RI,,,,,,,,,,^BU,,,,,,,,,,^TETYXIOPA,,,,,,,,,,^NIMC,,,,,,,,,,^PALLE
10⁰
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100120 140
JUNCTION TEMPERATURE (°C)
Feb.1999