BCR5AM Datasheet, PDF (3/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR5AM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE CHARACTERISTICS
10²
7
5
3
2 VGM = 10V
10¹
7
5
PGM =
3
2
VGT = 1.5V
0.3W
Tj = 25°C
10⁰
7
5
IGT = 20mA
PGM = 3W
IGM = 2A
3
2
10^–1
VGD = 0.2V
10¹ 2 3 5 7 10² 2 3 5 7 10³ 2 3 5 7 10⁴
GATE CURRENT (mA)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
10³
7
TYPICAL EXAMPLE
5
4
3
2
10²
7
5
4
3
2
10¹
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
MAXIMUM ON-STATE POWER
DISSIPATION
8
7
6 360°
CONDUCTION
5 _RESISTIVE,
INDUCTIVE
4 _LOADS
3
2
1
0
012345678
RMS ON-STATE CURRENT (A)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
10³
7
TYPICAL EXAMPLE
5
4
IRGT III
3
IRGT I
2
10²
IFGT I
7
5
4
3
2
10¹
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
10² 2 3 5 7 10³ 2 3 5
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
10^–1 2 3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10²
CONDUCTION TIME
(CYCLES AT 60Hz)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
160
CURVES APPLY REGARDLESS
140
OF CONDUCTION ANGLE
120
100
80
60
360°
40 CONDUCTION
RESISTIVE,
20 _INDUCTIVE
LOADS
0
012345678
RMS ON-STATE CURRENT (A)
Feb.1999