BCR5AM Datasheet, PDF (1/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

BCR5AM
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR5AM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
OUTLINE DRAWING
10.5 MAX
4
Dimensions
in mm
4.5
1.3
TYPE
NAME
VOLTAGE
CLASS
∗
φ3.6±0.2
1.0
0.8
2.5
2.5
0.5
2.6
• IT (RMS) ........................................................................ 5A
• VDRM ..............................................................400V/600V
• IFGT !, IRGT !, IRGT # ......................... 20mA (10mA) ^V5
1 2 3 _{∗ Measurement point of}
case temperature
24
1 T1 TERMINAL
2 T2 TERMINAL
3 ^{3 GATE TERMINAL}
1
4 T2 TERMINAL
TO-220
APPLICATION
Switching mode power supply, light dimmer, electric flasher unit,
control of household equipment such as TV sets · stereo · refrigerator · washing machine · infrared
kotatsu · carpet, solenoid drivers, small motor control,
copying machine, electric tool,
other general purpose control applications
MAXIMUM RATINGS
Symbol
Parameter
Voltage class
Unit
8
12
VDRM
Repetitive peak off-state voltage ^V1
400
600
V
VDSM
Non-repetitive peak off-state voltage ^V1
500
720
V
Symbol
IT (RMS)
ITSM
I^2t
Parameter
RMS on-state current
Surge on-state current
I^2t for fusing
PGM
Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM
Peak gate voltage
IGM
Peak gate current
Tj
Junction temperature
Tstg
Storage temperature
—
Weight
V1. Gate open.
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=103°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ratings
Unit
5
A
50
A
10.4
A²s
3
W
0.3
W
10
V
2
A
–40 ~ +125
°C
–40 ~ +125
°C
2.0
g
Feb.1999